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this is information on a product in full production. may 2014 docid15300 rev 4 1/14 STY130NF20D n-channel 200 v, 0.01 typ., 130 a stripfet? ii with fast recovery diode power mosfet in a max247 package datasheet - production data figure 1. internal schematic diagram features ? exceptional dv/dt capability ? 100% avalanche tested ? low gate charge applications ? switching applications description this power mosfet is produced using stmicroelectronics? unique stripfet? process, which is specifically designed to minimize input capacitance and gate charge. the device offers extremely fast switching performance thanks to the intrinsic fast body diode, making the device ideal for hard switching topologies. 1 2 3 max247 m a x 2 4 7 $0y ' * 6 order code v ds r ds(on) max. i d p tot STY130NF20D 200 v 0.012 ? 130 a 450 w table 1. device summary order code marking packages packaging STY130NF20D 130nf20d max247 tube www.st.com
contents STY130NF20D 2/14 docid15300 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid15300 rev 4 3/14 STY130NF20D electrical ratings 14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 130 a i d drain current (continuous) at t c =100 c 82 a i dm (1) 1. pulse width limited by t jmax drain current (pulsed) 520 a p tot total dissipation at t c = 25 c 450 w i ar (1) avalanche current, repetitive or not repetitive 130 a e as single pulse avalanche energy (2) 2. starting t j = 25 c, i d = i ar , v dd = 50 v 800 mj dv/dt (3) 3. i sd 130 a, di/dt 1000 a/ s, peak v ds v (br)dss peak diode recovery voltage slope 25 v/ns t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 0.28 c/w r thj-amb thermal resistance junction-ambient 30 c/w
electrical characteristics STY130NF20D 4/14 docid15300 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 200 v i dss zero gate voltage drain current v gs = 0, v ds = 200 v 10 a v gs = 0, v ds =200 v, t c =125 c 100 a i gss gate body leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a234v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 65 a 0.01 0.012 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs =0, v ds = 25 v, f=1 mhz, - 11100 - pf c oss output capacitance - 2190 - pf c rss reverse transfer capacitance -334 - pf c o(tr) (1) 1. c o(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss equivalent capacitance time related v gs =0, v ds = o to 160 - 1525 - pf c o(er) (2) 2. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss equivalent capacitance energy related -1139 - pf r g intrinsic gate resistance f=1 mhz, i d =0 - 1.4 - ? q g total gate charge v dd =160 v, i d = 130 a v gs = 10 v (see figure 16 ) -338 - nc q gs gate-source charge - 47 - nc q gd gate-drain charge - 183 - nc
docid15300 rev 4 5/14 STY130NF20D electrical characteristics 14 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 100 v, i d = 65 a, r g = 4.7 , v gs =10 v (see figure 15 ) -232-ns t r rise time - 218 - ns t d(off) turn-off delay time - 283 - ns t f fall time - 250 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 130 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 520 a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5% forward on voltage i sd = 130 a, v gs =0 - 1.6 v t rr reverse recovery time i sd = 130 a, di/dt = 100 a/ s, v dd = 100 v - 190 ns q rr reverse recovery charge - 1.4 c i rrm reverse recovery current - 14 a t rr reverse recovery time i sd = 130 a, di/dt = 100 a/ s, v dd = 100 v, tj=150 c - 257 ns q rr reverse recovery charge - 2.4 c i rrm reverse recovery current - 18 a
electrical characteristics STY130NF20D 6/14 docid15300 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v ?v pv pv 7m ?& 7f ?& 6lqjoh sxovh $0y , ' 9 '6 9 $ 9 9 9 9 *6 9 $0y , ' 9 *6 9 $ 9 '6 9 $0y 9 *6 4 j q& 9 9 '' 9 , ' $ 9 '6 9 '6 9 $0y 5 '6rq , ' $ 2kp 9 *6 9 $0y
docid15300 rev 4 7/14 STY130NF20D electrical characteristics 14 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized v (br)dss vs temperature & 9 '6 9 s) &lvv &rvv &uvv $0y ( rvv 9 '6 9 ?- $0y 9 *6wk 7 - ?& qrup , ' ? $ $0y 5 '6rq 7 - ?& qrup 9 *6 9 $0y 9 6' , 6' $ 9 7 - ?& 7 - ?& 7 - ?& $0y 9 %5'66 7 - ?& qrup , ' p$ $0y
electrical characteristics STY130NF20D 8/14 docid15300 rev 4 figure 14. maximum avalanche energy vs starting t j ( $6 7 - ?& p- , ' $ 9 '' 9 $0y
docid15300 rev 4 9/14 STY130NF20D test circuit 14 3 test circuit figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STY130NF20D 10/14 docid15300 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid15300 rev 4 11/14 STY130NF20D package mechanical data 14 figure 21. max247 drawing 0094330_rev_d
package mechanical data STY130NF20D 12/14 docid15300 rev 4 table 8. max247 mechanical data dim. mm min. typ. max. a4.70 5.30 a1 2.20 2.60 b1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c0.40 0.80 d 19.70 20.30 e5.35 5.55 e 15.30 15.90 l 14.20 15.20 l1 3.70 4.30
docid15300 rev 4 13/14 STY130NF20D revision history 14 5 revision history table 9. document revision history date revision changes 27-jan-2009 1 first release 29-oct-2009 2 some values have been updated in table 4 , table 5 , table 6 and table 7 11-jan-2010 3 document status promoted from preliminary data to datasheet. 16-may-2014 4 ? modified: title ? modified: figure 5 , 6 , 10 , 11 and 13 ? minor text changes in the cover page.
STY130NF20D 14/14 docid15300 rev 4 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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